EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES | ||
| Iranian Journal of Science | ||
| مقاله 7، دوره 32، شماره 3، آذر 2008، صفحه 207-213 اصل مقاله (2.01 M) | ||
| نوع مقاله: Regular Paper | ||
| شناسه دیجیتال (DOI): 10.22099/ijsts.2008.2288 | ||
| نویسندگان | ||
| M. ESMAEILI* 1؛ H. HARATIZADEH2؛ M. GHOLAMI3؛ B. MONEMAR4 | ||
| 11Department of Basic Science, Islamic Azad University, Damghan Branch, Damghan, I. R. of Iran | ||
| 2Department of Physics, Shahrood University of Technology, 3619995161, P.O. Box 316, Shahrood, I. R. of Iran | ||
| 3Department of Basic Science, Islamic Azad University, Damghan Branch, Damghan, I. R. of Iran | ||
| 4Department of Physics, Chemistry and Biology, Linkoping University, SE-581 581 83 Linkoping, Sweden | ||
| چکیده | ||
| Due to many important applications, the group III-Nitride semiconductors have recently attracted remarkable attention among semiconductor researchers and engineers. In this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. The optical efficiency of GaN/AlGaN multiple quantum well (MQW) nanostructures were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers, while temporal carriers originate when the samples are excited by laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements. | ||
| کلیدواژهها | ||
| Nanostructures؛ photoluminescence (PL)؛ GaN/AlGaN multi quantum well؛ time Resolved PL (TRPL)؛ polarization fields؛ exciton؛ III-Nitride semiconductors؛ quantum well | ||
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