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A high speed SiGe VCO based on self injection locking scheme | ||
| Iranian Journal of Science and Technology Transactions of Electrical Engineering | ||
| شناسنامه علمی شماره، دوره 31، شماره 6، فروردین 2007، صفحه 641-650 اصل مقاله (723.61 K) | ||
| شناسه دیجیتال (DOI): 10.22099/ijste.2007.857 | ||
| چکیده | ||
| This paper discusses the design and implementation of an inductorless differential VCO with a maximum oscillation frequency of 20 GHz, in a 47 GHz SiGe process technology. The VCO is based on afull-wave rectification frequency-doubling technique, applied to a half rate differential single-stage feedback oscillator. It also benefits from a new circuit phenomenon named hereinafter Self Injection Locking (SIL). The implemented VCO has an area of 0.5 mm2 and features a remarkably high ratio of VCO frequency to process fT. Based on measurement results, the VCO consumes a DC power of less than 165 mW and exhibits a phase noise of -96 dBc/Hz at 1 MHz offset | ||
| کلیدواژهها | ||
| Silicon germanium (SiGe)؛ heterojunction bipolar transistor (HBT)؛ high-speed circuit؛ voltage-controlled oscillator (VCO)؛ phase noise؛ differential stage؛ injection locking oscillator | ||
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