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. (1391). Study of the conduction band offset alignment caused by oxygen vacancies in SiO2 layer and its effects on the gate leakage current in nano-mosfets. , 35(1), 1-11. doi: 10.22099/ijste.2012.812
. "Study of the conduction band offset alignment caused by oxygen vacancies in SiO2 layer and its effects on the gate leakage current in nano-mosfets". , 35, 1, 1391, 1-11. doi: 10.22099/ijste.2012.812
. (1391). 'Study of the conduction band offset alignment caused by oxygen vacancies in SiO2 layer and its effects on the gate leakage current in nano-mosfets', , 35(1), pp. 1-11. doi: 10.22099/ijste.2012.812
. Study of the conduction band offset alignment caused by oxygen vacancies in SiO2 layer and its effects on the gate leakage current in nano-mosfets. , 1391; 35(1): 1-11. doi: 10.22099/ijste.2012.812


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