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Influence of thickness and temperature on the properties of Cu2S thin films | ||
| Iranian Journal of Science | ||
| مقاله 12، دوره 37، شماره 3، آبان 2013، صفحه 293-300 اصل مقاله (435.72 K) | ||
| نوع مقاله: Regular Paper | ||
| شناسه دیجیتال (DOI): 10.22099/ijsts.2013.1606 | ||
| نویسندگان | ||
| M. Ramya* 1؛ S. Ganesan2 | ||
| 1Department of Physics, Sri Shakthi Institute of Eng. & Tech., Coimbatore 641 062, Tamil Nadu, India | ||
| 2Department of Physics, Government College of Technology, Coimbatore 641 013, Tamil Nadu, India | ||
| چکیده | ||
| Copper Sulphide (Cu 2 S) thin films at different thicknesses and annealing temperatures were deposited onto glass substrate by vacuum evaporation method. XRD study reveals the phase transformation of Cu 2 S film at higher thickness. Optical and resistivity study show the phase transformation of the film from Cu 2 S to CuS when they are annealed at higher temperature. SEM study exhibits the disappearance of large size particles of annealed film. Stability of the film is controlled when the films are prepared at higher thickness. Optical band gap and activation energy for different thickness and various annealing temperatures of Cu 2 S thin film were calculated and the values are reported. Photocurrent enhances with film thickness and heat treatment. | ||
| کلیدواژهها | ||
| Vacuum evaporation؛ annealing temperature؛ phase transformation؛ optical properties؛ resistivity properties and photocurrent | ||
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